US 12,349,401 B2
Semiconductor device including a trench structure having a trench dielectric structure with a gap
Hans Weber, Bayern (DE); David Kammerlander, Villach (AT); and Andreas Riegler, Lichtpold (AT)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Mar. 15, 2022, as Appl. No. 17/695,207.
Claims priority of application No. 21164244 (EP), filed on Mar. 23, 2021.
Prior Publication US 2022/0310838 A1, Sep. 29, 2022
Int. Cl. H10D 30/66 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/668 (2025.01) [H10D 64/112 (2025.01); H10D 64/514 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor body having a first main surface;
a trench structure extending into the semiconductor body from the first main surface, wherein the trench structure includes a trench electrode structure and a trench dielectric structure, and the trench dielectric structure includes a gate dielectric in an upper part of the trench dielectric structure and a gap laterally extending from a sidewall of the trench structure to the trench electrode structure in a lower part of the trench dielectric structure; and
a body region adjoining the gate dielectric at the sidewall of the trench structure in the upper part of the trench dielectric structure, wherein the gate dielectric extends deeper into the semiconductor body along the sidewall of the trench structure than the body region,
wherein an interface between the gap and the trench electrode structure has one or more steps and/or wherein an interface between the gap and the semiconductor body comprises a step.