US 12,349,399 B2
Lateral diffusion metal-oxide semiconductor device
Ling-Chun Chou, Tainan (TW); Yu-Hung Chang, Tainan (TW); and Kun-Hsien Lee, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Dec. 5, 2023, as Appl. No. 18/528,806.
Application 18/528,806 is a division of application No. 17/472,680, filed on Sep. 12, 2021, granted, now 11,881,527.
Claims priority of application No. 202110935538.1 (CN), filed on Aug. 16, 2021.
Prior Publication US 2024/0120419 A1, Apr. 11, 2024
Int. Cl. H10D 30/65 (2025.01); H10D 62/10 (2025.01)
CPC H10D 30/655 (2025.01) [H10D 62/107 (2025.01)] 7 Claims
OG exemplary drawing
 
1. A lateral diffusion metal-oxide semiconductor (LDMOS) device, comprising:
a first gate structure and a second gate structure extending along a first direction on a substrate;
a first source region extending along the first direction on one side of the first gate structure;
a second source region extending along the first direction on one side of the second gate structure;
a drain region extending along the first direction between the first gate structure and the second gate structure;
a first guard region directly connecting the first source region and the second source region on one side of the first gate structure and the second gate structure; and
a second guard region connecting the first source region and the second source region on another side of the first gate structure and the second gate structure.