| CPC H10D 30/477 (2025.01) [H10D 30/472 (2025.01); H10D 62/824 (2025.01); H10D 64/257 (2025.01); H10D 64/411 (2025.01); H03F 3/213 (2013.01)] | 8 Claims |
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1. A semiconductor device comprising:
an elongated first mesa having a first mesa end and a second mesa end, wherein the first mesa extends longitudinally along a first longitudinal axis L1 from the first mesa end of the first mesa to the second mesa end of the first mesa, wherein the first mesa comprises a plurality of semiconductor layers;
an elongated second mesa having a first mesa end and a second mesa end, wherein the second mesa extends longitudinally along a second longitudinal axis L2 from the first mesa end of the second mesa to the second mesa end of the second mesa, wherein the second mesa comprises a plurality of semiconductor layers, wherein the first longitudinal axis L1 is parallel to the second longitudinal axis L2, wherein a line L3 extending from the first mesa end of the first mesa in a direction perpendicular to the first longitudinal axis L1 intersects the second longitudinal axis L2 and also passes through the second mesa, and wherein a line L4 extending from the second mesa end of the first mesa in a direction perpendicular to the first longitudinal axis L1 intersects the second longitudinal axis L2 but does not pass through the second mesa;
a first plurality of parallel-extending gate fingers that are at least partly disposed on the first mesa;
a second plurality of parallel-extending gate fingers that are at least partly disposed on the second mesa;
a gate electrode that comprises a first gate electrode portion and a second gate electrode portion, wherein the first gate electrode portion extends from a gate electrode intersection location to the first plurality of parallel-extending gate fingers, and wherein the second gate electrode portion extends from the gate electrode intersection location to the second plurality of parallel-extending gate fingers;
a first plurality of parallel-extending drain fingers that are at least partly disposed on the first mesa;
a second plurality of parallel-extending drain fingers that are at least partly disposed on the second mesa; and
a drain electrode that comprises a first drain electrode portion and a second drain electrode portion, wherein the first drain electrode portion extends from the first plurality of parallel-extending drain fingers and to a drain electrode intersection location, and wherein the second drain electrode portion extends from the second plurality of parallel extending drain fingers to the drain electrode intersection location, wherein the first drain electrode portion and the second drain electrode portion are of the same length, wherein the first longitudinal axis L1, the second longitudinal axis L2, the line L3 and the line L4 are all disposed in a single plane, wherein the first longitudinal axis L1 extends through the first mesa, and wherein the second longitudinal axis L2 extends through the second mesa.
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