US 12,349,372 B2
Method of forming semiconductor structure and semiconductor structure
Chih-Cheng Liu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jan. 3, 2023, as Appl. No. 18/149,182.
Application 18/149,182 is a continuation of application No. PCT/CN2021/135640, filed on Dec. 6, 2021.
Claims priority of application No. 202111060919.6 (CN), filed on Sep. 10, 2021.
Prior Publication US 2023/0141481 A1, May 11, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H10D 1/20 (2025.01)
CPC H10D 1/20 (2025.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5227 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, wherein the method of forming the semiconductor structure comprises:
providing an initial structure, wherein the initial structure comprises a substrate and a dielectric layer provided on the substrate, the dielectric layer is provided on a first side of the substrate, and a bottom surface of the dielectric layer is connected to a first side surface of the substrate;
forming a conductive trench, wherein the conductive trench extends to a second side surface of the substrate from a top surface of the dielectric layer, the conductive trench exposes part of the dielectric layer and part of the substrate, and a distance between a bottom surface of the conductive trench and the second side surface of the substrate is a first spacing;
forming a conductive hole, wherein the conductive hole extends to the second side surface of the substrate from the top surface of the dielectric layer;
forming a conductive pillar, wherein the conductive pillar fills the conductive hole;
forming an inductor structure, wherein the inductor structure fills the conductive trench, and projection of the inductor structure on the substrate is provided as a spiral structure that uses projection of the conductive pillar on the substrate as an inductor center and that surrounds the inductor center; and
forming an inductor lead-out structure, wherein the inductor lead-out structure covers the conductive pillar and the inductor structure that are exposed by the top surface of the dielectric layer.
 
11. A semiconductor structure, wherein the semiconductor structure comprises:
a substrate, wherein the substrate comprises a first side and a second side;
a dielectric layer, wherein the dielectric layer is provided on the first side of the substrate, and a bottom surface of the dielectric layer is connected to a first side surface of the substrate;
a conductive trench, wherein the conductive trench extends to a second side surface of the substrate from a top surface of the dielectric layer, the conductive trench exposes part of the dielectric layer and part of the substrate, and a distance between a bottom surface of the conductive trench and the second side surface of the substrate is a first spacing;
a conductive hole, wherein the conductive hole extends to the second side surface of the substrate from the top surface of the dielectric layer;
a conductive pillar, wherein the conductive pillar fills the conductive hole;
an inductor structure, wherein the inductor structure fills the conductive trench, and projection of the inductor structure on the substrate is provided as a spiral structure that uses projection of the conductive pillar on the substrate as an inductor center and that surrounds the inductor center; and
an inductor lead-out structure, wherein the inductor lead-out structure covers the conductive pillar and the inductor structure that are exposed by the top surface of the dielectric layer.