US 12,349,331 B2
Semiconductor device and method for fabricating the same
Seung Hwan Kim, Gyeonggi-do (KR); Kyung Hoon Min, Gyeonggi-do (KR); and Ilsup Jin, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Apr. 1, 2022, as Appl. No. 17/711,777.
Claims priority of application No. 10-2021-0133191 (KR), filed on Oct. 7, 2021.
Prior Publication US 2023/0115443 A1, Apr. 13, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/05 (2023.02) [H10B 12/02 (2023.02); H10B 12/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming an etch stopper pad including a sacrificial plug over a substrate and a sacrificial pad over the sacrificial plug;
forming an etch target layer over the etch stopper pad;
forming a plurality of openings by etching the etch target layer and stopping the etching at the sacrificial pad;
forming an air gap by removing the sacrificial pad and the sacrificial plug through the openings; and
forming a gap-fill layer that fills the openings and the air gap.