| CPC H04N 25/65 (2023.01) [H04N 25/709 (2023.01); H04N 25/77 (2023.01); H10K 39/32 (2023.02)] | 18 Claims |

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1. An imaging device comprising:
a semiconductor substrate; and
a first transistor provided on the semiconductor substrate and including a first gate electrode, a source, and a drain, wherein
the semiconductor substrate includes
a first well region of a second conductivity type,
a second well region of a first conductivity type different from the second conductivity type,
a first impurity region of the first conductivity type, the first impurity region being positioned in the first well region, being one of the source and the drain, holding charges generated by photoelectric conversion, and being electrically connected to the first gate electrode, and
a second impurity region of the second conductivity type, the second impurity region being positioned in the second well region and electrically connected to the other of the source and the drain.
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