US 12,348,214 B2
Surface acoustic wave device and method for fabricating the same
Shih-Hung Tsai, Tainan (TW); Hon-Huei Liu, Kaohsiung (TW); and Chun-Hsien Lin, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Aug. 3, 2021, as Appl. No. 17/393,384.
Claims priority of application No. 202110771313.7 (CN), filed on Jul. 8, 2021.
Prior Publication US 2023/0009805 A1, Jan. 12, 2023
Int. Cl. H03H 9/05 (2006.01); H03H 3/08 (2006.01); H03H 9/02 (2006.01)
CPC H03H 9/059 (2013.01) [H03H 3/08 (2013.01); H03H 9/02559 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A surface acoustic wave (SAW) device, comprising:
a first dielectric layer on a substrate;
a piezoelectric layer on the first dielectric layer; and
an electrode on the piezoelectric layer, and
a second dielectric layer on the piezoelectric layer, wherein the second dielectric layer surrounds side surfaces of the electrode,
wherein top surfaces of the electrode and the second dielectric layer are coplanar.