US 12,348,003 B2
Tunable semiconductor laser device
Jan-Olof Wesstroem, Stockholm (SE); and Per Granestrand, Tyreso (SE)
Assigned to II-VI DELAWARE, INC., Wilmington, DE (US)
Filed by II-VI Delaware, Inc., Wilmington, DE (US)
Filed on Apr. 26, 2023, as Appl. No. 18/307,429.
Application 18/307,429 is a continuation of application No. 16/923,945, filed on Jul. 8, 2020, granted, now 11,670,907.
Claims priority of provisional application 62/871,536, filed on Jul. 8, 2019.
Prior Publication US 2023/0361529 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/00 (2006.01); G01S 7/481 (2006.01); H01S 5/068 (2006.01); H01S 5/12 (2021.01); H01S 5/125 (2006.01); H01S 5/50 (2006.01)
CPC H01S 5/068 (2013.01) [G01S 7/4814 (2013.01); H01S 5/1243 (2013.01); H01S 5/125 (2013.01); H01S 5/50 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A tunable semiconductor laser device comprising:
a front Distributed Bragg Reflector (DBR) coupled to a front DBR electrode, the front DBR forming a first tunable multi-peak lasing filter;
a back DBR coupled to a back DBR electrode, the back DBR forming a second tunable multi-peak lasing filter;
an interferometer part coupled between the front DBR and the back DBR; and
multiple cascade connected interferometer parts between the front DBR and the back DBR.