US 12,347,820 B2
Stacked devices and methods of fabrication
Paul M. Enquist, Cary, NC (US); and Belgacem Haba, Saratoga, CA (US)
Assigned to ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on Nov. 13, 2023, as Appl. No. 18/507,478.
Application 18/507,478 is a continuation of application No. 17/586,236, filed on Jan. 27, 2022, granted, now 11,916,054.
Application 17/586,236 is a continuation of application No. 16/413,429, filed on May 15, 2019, granted, now 11,276,676, issued on Mar. 15, 2022.
Claims priority of provisional application 62/671,917, filed on May 15, 2018.
Prior Publication US 2024/0088120 A1, Mar. 14, 2024
Int. Cl. H01L 25/18 (2023.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01); H10F 39/00 (2025.01)
CPC H01L 25/18 (2013.01) [H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 24/09 (2013.01); H01L 25/074 (2013.01); H01L 25/50 (2013.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01); H10F 39/018 (2025.01); H10F 39/026 (2025.01); H10F 39/804 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/809 (2025.01); H10F 39/811 (2025.01); H01L 2224/02379 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a bonded sensor structure, the method comprising:
bonding a first side of a connecting wafer to a second side of a sensor wafer to form a first bonded structure having a first side with the sensor wafer and a second side opposite the first side;
hybrid bonding the second side of the first bonded structure to a first side of a logic element;
after hybrid bonding the second side of the first bonded structure to the first side of the logic element, processing a first side of the sensor wafer opposite the second side of the sensor wafer, wherein processing the first side of the sensor wafer includes providing optical features over the first side of the sensor wafer to form the bonded sensor structure; and
opening contacts to the bonded sensor structure.