CPC H01L 25/072 (2013.01) [H01L 23/3735 (2013.01); H01L 24/40 (2013.01); H01L 24/84 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/4001 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/4052 (2013.01); H01L 2224/40991 (2013.01); H01L 2224/8484 (2013.01); H01L 2224/84931 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/0503 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01)] | 20 Claims |
1. A method of forming a semiconductor package comprising:
applying sintering material over one of a first side of a plurality of die or a first side of a clip;
applying sintering material to one of a first side of an electrically conductive spacer or the clip;
pressure sintering the electrically conductive spacer and plurality of die to the clip through the sintering material;
applying sintering material to one of a the second side of the plurality of die or a substrate, the second side of the plurality of die opposite the first side of the plurality of die;
applying sintering material to one of a second side of the electrically conductive spacer or the substrate, the second side opposite the first side of the electrically conductive spacer; and
pressure sintering the substrate to the electrically conductive spacer and plurality of die through the sintering material.
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