| CPC H01L 23/645 (2013.01) [H01L 24/64 (2013.01); H01L 2924/19042 (2013.01)] | 12 Claims |

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1. A semiconductor die, comprising:
circuitry comprising a transistor at a frontside of a semiconductor substrate;
a backside inductor at a backside of the semiconductor substrate; and
a conductive line at the frontside of the semiconductor substrate,
wherein the backside inductor is electrically connected to the conductive line and the conductive line is electrically connected to the transistor,
wherein the conductive line is a power line for providing power to the transistor and buried in the semiconductor substrate under the circuitry.
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