| CPC H01L 23/5256 (2013.01) [G06F 30/39 (2020.01); H01L 21/76892 (2013.01); H01L 23/573 (2013.01); G06F 2119/18 (2020.01)] | 20 Claims |

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1. A semiconductor device, comprising:
a component;
a first fuse electrically between the component and a signal source, wherein the first fuse is a first distance from the component, the first fuse comprises a fuse material, and the first fuse has a fuse dimension;
a conductive line electrically between the component and the first fuse, wherein the conductive line has a first dimension and a first material, and at least one of the following conditions is satisfied:
the fuse dimension is different from the first dimension, or
the fuse material is different from the first material; and
a second fuse electrically connected to the component, wherein the second fuse is a second distance from the component, the second distance is different from the first distance, the second fuse electrically connects the signal source to a dummy interconnect structure, and the dummy interconnect structure is external to the second fuse.
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14. A semiconductor device, comprising:
a component;
a first fuse electrically between the component and a signal source, wherein the first fuse is a first distance from the component;
a second fuse electrically connected to the component, wherein the second fuse is a second distance from the component, the second distance is different from the first distance, the second fuse has a dimension less than a conductive line on a same metal level, and the second fuse is incapable of providing an electrical path between the component and the signal source;
a first interconnect structure;
a second interconnect structure, wherein the first fuse electrically connects the first interconnect structure to the second interconnect structure; and
a third interconnect structure, wherein the second fuse electrically connects the second interconnect structure to the third interconnect structure.
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