US 12,347,766 B2
Semiconductor structure and method for forming the same
Hao-Chuan Chang, Taichung (TW)
Assigned to WINBOND ELECTRONICS CORP., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Feb. 1, 2022, as Appl. No. 17/590,293.
Prior Publication US 2023/0275017 A1, Aug. 31, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/53266 (2013.01); H01L 23/53271 (2013.01); H01L 23/5329 (2013.01); H10B 12/482 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate having an active area and an isolation structure;
a bit line structure disposed on the active area;
a first conductive pillar disposed on the active area;
an interface layer disposed on a top surface of the first conductive pillar;
a second conductive pillar disposed on the interface layer; and
an intermediate structure disposed between the first conductive pillar and the bit line structure,
wherein the interface layer completely covers a top surface of the first conductive pillar.