US 12,347,764 B2
Organic interposer including intra-die structural reinforcement structures and methods of forming the same
Li-Ling Liao, Hsinchu (TW); Ming-Chih Yew, Hsinchu (TW); Chia-Kuei Hsu, Hsinchu (TW); Shu-Shen Yeh, Taoyuan (TW); Po-Yao Lin, Zhudong Township (TW); and Shin-Puu Jeng, Po-Shan Village (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jun. 3, 2024, as Appl. No. 18/731,407.
Application 18/121,189 is a division of application No. 17/085,186, filed on Oct. 30, 2020, granted, now 11,610,835, issued on Mar. 21, 2023.
Application 18/731,407 is a continuation of application No. 18/121,189, filed on Mar. 14, 2023, granted, now 12,040,267.
Prior Publication US 2024/0321717 A1, Sep. 26, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/48 (2006.01); H01L 23/498 (2006.01); H10K 71/00 (2023.01)
CPC H01L 23/49838 (2013.01) [H01L 23/49805 (2013.01); H01L 23/49822 (2013.01); H10K 71/621 (2023.02); H01L 23/49816 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An organic interposer comprising:
dielectric material layers embedding redistribution interconnect structures;
package-side bump structures located on a first side of the dielectric material layers and connected to a package-side subset of the redistribution interconnect structures;
die-side bump structures located on a second side of the dielectric material layers and connected to a die-side subset of the redistribution interconnect structures, wherein the die-side bump structures comprise first die-side bump structures located in a first area and second die-side bump structures located in a second area that is laterally spaced apart from the first area by a gap region that is free of any die-side bump structure in a plan view; and
stress-relief line structures located on, or within, the dielectric material layers within an area of the gap region in the plan view, wherein the stress-relief line structures comprises a same material as, and are located at a same level as, one of the package-side bump structures, the redistribution interconnect structures, and the die-side bump structures,
wherein the stress-relief line structures comprise first stress-relief line structures laterally extending along a first horizontal direction and second stress-relief lines structures laterally extending along a second horizontal direction; and
wherein the stress-relief line structures have a different material composition than, or have a different thickness than, the package-side bump structures.