US 12,347,747 B2
Semiconductor devices including a through-hole electrode
Jimin Choi, Suwon-si (KR); Jongmin Lee, Suwon-si (KR); Yeonjin Lee, Suwon-si (KR); Jeonil Lee, Suwon-si (KR); Juik Lee, Suwon-si (KR); and Minjung Choi, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 24, 2022, as Appl. No. 17/751,740.
Claims priority of application No. 10-2021-0122231 (KR), filed on Sep. 14, 2021.
Prior Publication US 2023/0077803 A1, Mar. 16, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/481 (2013.01) [H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0557 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an etch stop layer on the substrate, the etch stop layer including a first surface adjacent to the substrate and a second surface opposite the first surface;
a through-hole electrode extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upper surface of the substrate, the through-hole electrode including a protrusion portion that protrudes beyond the second surface of the etch stop layer, and the protrusion portion being not flat; and
a conductive pad covering the protrusion portion of the through-hole electrode,
wherein:
the through-hole electrode is a first through-hole electrode,
the protrusion portion of the first through-hole electrode is a first protrusion portion,
the semiconductor device further includes a second through-hole electrode extending through the substrate and the etch stop layer in the vertical direction, the second through-hole electrode having a width different from that of the first through-hole electrode and including a second protrusion portion that protrudes beyond the second surface of the etch stop layer, and
the second protrusion portion of the second through-hole electrode is not flat.