US 12,347,739 B2
Package structure
Chih-Wei Wu, Yilan County (TW); Ying-Ching Shih, Hsinchu (TW); and Wen-Chih Chiou, Miaoli County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 26, 2022, as Appl. No. 17/896,097.
Prior Publication US 2024/0071855 A1, Feb. 29, 2024
Int. Cl. H01L 23/367 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/367 (2013.01) [H01L 23/3128 (2013.01); H01L 23/3157 (2013.01); H01L 23/49811 (2013.01); H01L 23/5383 (2013.01); H01L 23/5389 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/18 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/29 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29298 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a semiconductor die laterally encapsulated by an insulating encapsulation;
a redistribution circuit structure disposed on the semiconductor die and the insulating encapsulation, the redistribution circuit structure comprising redistribution conductive layers and thermal enhancement structures electrically insulated from the redistribution conductive layers, and the thermal enhancement structures being thermally coupled to the semiconductor die;
a backside dielectric layer disposed on the redistribution circuit structure;
conductive terminals penetrating through the backside dielectric layer;
an electronic device disposed over the backside dielectric layer and electrically connected to the redistribution circuit structure through the conductive terminals; and
an underfill disposed between the backside dielectric layer and the electronic device, wherein the underfill is thermally coupled to the thermal enhancement structures.