US 12,347,737 B2
Semiconductor device with a porous air vent
Jong Sik Paek, Taichung (TW)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 18, 2022, as Appl. No. 17/890,592.
Prior Publication US 2024/0063067 A1, Feb. 22, 2024
Int. Cl. H01L 23/14 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/13 (2006.01)
CPC H01L 23/13 (2013.01) [H01L 21/563 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 2224/16221 (2013.01); H01L 2224/32221 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8309 (2013.01); H01L 2224/83091 (2013.01); H01L 2224/83102 (2013.01); H01L 2924/1511 (2013.01); H01L 2924/15151 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device assembly, comprising:
a substrate having an upper surface, a lower surface, and a plurality of contact pads disposed at the upper surface;
a semiconductor die coupled to the plurality of contact pads; and
an underfill material disposed at least between the semiconductor die and the substrate,
wherein the substrate includes porous portion comprising a porous material that enables a gaseous material to pass from the upper surface to the lower surface through the porous portion and prevents the underfill material from passing from the upper surface to the lower surface through the porous portion.