US 12,347,728 B2
Bi-layer alloy liner for interconnect metallization and methods of forming the same
Huei-Wen Hsieh, Hsinchu (TW); Kai-Shiang Kuo, Hsinchu (TW); Cheng-Hui Weng, Hsinchu (TW); Chun-Sheng Chen, Hsinchu (TW); and Wen-Hsuan Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/873,941.
Application 17/873,941 is a division of application No. 17/066,706, filed on Oct. 9, 2020, granted, now 11,854,878.
Claims priority of provisional application 62/954,240, filed on Dec. 27, 2019.
Prior Publication US 2022/0367265 A1, Nov. 17, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10D 84/83 (2025.01)
CPC H01L 21/76882 (2013.01) [H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 21/76858 (2013.01); H01L 21/76862 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 21/76807 (2013.01); H01L 21/76849 (2013.01); H01L 21/76883 (2013.01); H01L 2221/1073 (2013.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a dielectric layer comprising a trench;
a barrier layer along walls of the trench;
a liner layer in the trench over the barrier layer, the liner layer comprising a sidewall segment and a bottom segment, the liner layer further comprising a bottom surface and a top surface, the bottom surface along the barrier layer, the top surface opposite the bottom surface, the liner layer having a first composition at a first location on the top surface being different from a second composition at a second location on the bottom surface, wherein a ruthenium concentration in the liner layer increases from the top surface to the bottom surface; and
a conductive fill material disposed in the trench and over the liner layer.