US 12,347,727 B2
Treatment of spin on organic material to improve wet resistance
Tzu-Yang Lin, Hsinchu (TW); Chen-Yu Liu, Hsinchu (TW); Cheng-Han Wu, Hsinchu (TW); and Ching-Yu Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 5, 2022, as Appl. No. 17/737,821.
Claims priority of provisional application 63/227,609, filed on Jul. 30, 2021.
Prior Publication US 2023/0099053 A1, Mar. 30, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/76865 (2013.01) [H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/32134 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01); H01L 2221/1063 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor process, comprising:
forming a feature on a workpiece;
forming a conductive layer in the feature;
forming an organic material layer over the conductive layer;
removing a portion of the organic material layer;
altering the organic material layer to increase its resistance to penetration by a wet etchant, wherein the altering the organic material layer to increase its resistance to penetration by the wet etchant includes contacting the organic material layer with a surfactant having a zwitterionic end group; and
contacting a portion of the conductive layer with the wet etchant, thereby removing the portion of the conductive layer.