US 12,347,724 B2
Surface modification layer for conductive feature formation
Jian-Jou Lian, Tainan (TW); Kuo-Bin Huang, Jhubei (TW); Neng-Jye Yang, Hsinchu (TW); and Li-Min Chen, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 26, 2024, as Appl. No. 18/586,925.
Application 18/586,925 is a continuation of application No. 18/178,948, filed on Mar. 6, 2023, granted, now 11,942,362.
Application 18/178,948 is a continuation of application No. 16/914,788, filed on Jun. 29, 2020, granted, now 11,600,521, issued on Mar. 7, 2023.
Application 16/914,788 is a continuation of application No. 16/145,457, filed on Sep. 28, 2018, granted, now 10,699,944, issued on Jun. 30, 2020.
Prior Publication US 2024/0194522 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76823 (2013.01) [H01L 21/02307 (2013.01); H01L 21/30604 (2013.01); H01L 21/4857 (2013.01); H01L 21/76814 (2013.01); H01L 21/76826 (2013.01); H01L 21/76831 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
depositing a first dielectric layer and a second dielectric layer over a conductive region, the conductive region being over a semiconductor substrate;
forming an opening through both the first dielectric layer and the second dielectric layer to expose the conductive region; and
replacing OH groups on a surface of the second dielectric layer within the opening with a monolayer comprising phosphoric acid derivative molecules, the monolayer having a thickness no thicker than a length of one of the phosphoric acid derivative molecules, wherein the first dielectric layer is free from the monolayer.