US 12,347,722 B2
Semiconductor device structure with a protection cap at an end portion of a conductive line
Ting-Li Yang, Tainan (TW); Wei-Li Huang, Pingtung (TW); Sheng-Pin Yang, Kaohsiung (TW); Chi-Cheng Chen, Tainan (TW); Hon-Lin Huang, Hsinchu (TW); Chin-Yu Ku, Hsinchu (TW); and Chen-Shien Chen, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 13, 2023, as Appl. No. 18/154,540.
Application 16/994,091 is a division of application No. 15/991,523, filed on May 29, 2018, granted, now 10,748,810, issued on Aug. 18, 2020.
Application 18/154,540 is a continuation of application No. 16/994,091, filed on Aug. 14, 2020, granted, now 11,557,508.
Prior Publication US 2023/0154788 A1, May 18, 2023
Int. Cl. H01L 23/00 (2006.01); H01F 17/00 (2006.01); H01F 41/04 (2006.01); H01L 21/768 (2006.01); H01L 23/04 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10D 1/20 (2025.01)
CPC H01L 21/76816 (2013.01) [H01F 17/0013 (2013.01); H01F 17/0033 (2013.01); H01F 41/046 (2013.01); H01L 21/76877 (2013.01); H01L 23/04 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H10D 1/20 (2025.01); H01F 2017/004 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/163 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first conductive line over a substrate, wherein the first conductive line has a main portion and an end portion, the end portion is connected to the main portion, and a first line width of the end portion is greater than a second line width of the main portion;
a first protection cap over the end portion, wherein the first protection cap and the first conductive line are made of different conductive materials, the first protection cap exposes a peripheral region of a top surface of the end portion, and a maximum width of the first protection cap is greater than the second line width of the main portion;
a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap; and
a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap.
 
13. A semiconductor device structure, comprising:
a conductive line over a substrate, wherein the conductive line has a main portion and an end portion, the end portion is connected to the main portion, and a line width of the end portion decreases toward the main portion;
a protection cap over the end portion, wherein the protection cap and the conductive line are made of different conductive materials;
a first photosensitive dielectric layer over the substrate, the conductive line, and the protection cap;
a conductive via structure passing through the first photosensitive dielectric layer and connected to the protection cap, wherein the protection cap has a top end and a bottom end, the top end is in contact with the conductive via structure, the bottom end is in contact with the end portion of the conductive line, and a first average width of the top end is substantially equal to a second average width of the bottom end;
a magnetic core over the first photosensitive dielectric layer, wherein the magnetic core extends across the conductive line; and
a second photosensitive dielectric layer over the first photosensitive dielectric layer and the magnetic core, wherein the conductive via structure further passes through the second photosensitive dielectric layer.
 
16. A semiconductor device structure, comprising:
a first conductive line over a substrate, wherein the first conductive line has a main portion and a rounded end portion, and the rounded end portion is connected to the main portion;
a first protection cap over the rounded end portion, wherein the first protection cap and the first conductive line are made of different conductive materials;
a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap; and
a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap, wherein the first photosensitive dielectric layer is in contact with a first sidewall of the first protection cap, a second sidewall of the rounded end portion, and a third sidewall of the conductive via structure, and the first sidewall is between the second sidewall and the third sidewall.