US 12,347,721 B2
Semiconductor device and method of producing the same, and electronic device
Katsuhiko Takeuchi, Kanagawa (JP); and Keita Takahashi, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/757,182
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Oct. 29, 2020, PCT No. PCT/JP2020/040699
§ 371(c)(1), (2) Date Jun. 10, 2022,
PCT Pub. No. WO2021/124706, PCT Pub. Date Jun. 24, 2021.
Claims priority of application No. 2019-230359 (JP), filed on Dec. 20, 2019.
Prior Publication US 2023/0014905 A1, Jan. 19, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/67 (2006.01); H10D 30/01 (2025.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01)
CPC H01L 21/768 (2013.01) [H01L 21/67063 (2013.01); H10D 64/511 (2025.01); H10D 84/83 (2025.01); H10D 30/015 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising
a first field effect transistor and a second field effect transistor mounted on a semiconductor substrate; and
an insulating layer provided on a main surface of the semiconductor substrate,
wherein each of the first field effect transistor and the second field effect transistor includes
a pair of main electrodes which are separated from each other and provided on the main surface of the semiconductor substrate,
a cavity part which is provided in the insulating layer between the pair of main electrodes, and
a gate electrode which has a head part positioned on the insulating layer and a body part that penetrates the insulating layer from the head part and protrudes toward the cavity part and in which the head part is wider than the body part, and
wherein a width of the cavity part of the second field effect transistor is different from a width of the cavity part of the first field effect transistor.