	US 12,347,717 B2
	Debonding structures for wafer bonding
Wei-Ting Yeh, Hsinchu (TW); Zheng Yong Liang, Hsinchu (TW); De-Yang Chiou, Hsinchu (TW); Yu-Yun Peng, Hsinchu (TW); and Keng-Chu Lin, Ping-Tung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 23, 2022, as Appl. No. 17/702,238.
Claims priority of provisional application 63/214,572, filed on Jun. 24, 2021.
Prior Publication US 2022/0415696 A1, Dec. 29, 2022
Int. Cl. H01L 21/683 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01)

CPC H01L 21/6835 (2013.01) [H01L 21/76251 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68372 (2013.01); H01L 2221/68386 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/83026 (2013.01); H01L 2224/83048 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/0504 (2013.01); H01L 2924/0544 (2013.01); H01L 2924/059 (2013.01)]

20 Claims

1. A method, comprising:

forming a first bonding layer on a first wafer;

forming a debonding structure on a second wafer, wherein the debonding structure comprises a first barrier layer, a second barrier layer, and a water-containing dielectric layer in contact and between the first and second barrier layers;

forming a second bonding layer on the debonding structure;

bonding the first and second wafers with the first and second bonding layers; and

debonding the second wafer from the first wafer via the debonding structure.

11. A method, comprising:

forming a first bonding layer on a first wafer, wherein the first wafer comprises a plurality of devices;

forming a debonding structure on a second wafer, wherein the debonding structure comprises a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers, and wherein the second barrier layer is in contact with the second wafer;

forming a second bonding layer on the debonding structure;

bonding the second bonding layer to the first bonding layer on a first side of the plurality of devices;

forming an interconnect layer on a second side of the plurality of devices, wherein the second side is opposite to the first side;

forming a third bonding layer on the interconnect layer;

forming a fourth bonding layer on a third wafer;

bonding the fourth bonding layer to the third bonding layer on the second side of the plurality of devices; and

debonding the second wafer from the first and third wafers via the debonding structure.

17. A method, comprising:

forming a first bonding layer on a first wafer;

depositing a first barrier layer on a second wafer;

depositing a water-containing dielectric layer on the first barrier layer;

depositing a second barrier layer in contact with the water-containing dielectric layer;

forming a second bonding layer on the second barrier layer, wherein the water-containing layer is between the second bonding layer and the second wafer;

bonding the first bonding layer to the second bonding layer; and

treating the water-containing dielectric layer to separate the second wafer from the first wafer.