US 12,347,696 B2
Laser de-bonding carriers and composite carriers thereof
Huicheng Chang, Tainan (TW); Jyh-Cherng Sheu, Hsinchu (TW); Chen-Fong Tsai, Hsinchu (TW); Yun Chen Teng, New Taipei (TW); Han-De Chen, Hsinchu (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 11, 2024, as Appl. No. 18/410,100.
Application 18/410,100 is a continuation of application No. 17/479,467, filed on Sep. 20, 2021, granted, now 11,908,708.
Claims priority of provisional application 63/211,723, filed on Jun. 17, 2021.
Prior Publication US 2024/0153786 A1, May 9, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/56 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 21/568 (2013.01) [H01L 21/561 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a composite carrier comprising:
a silicon wafer;
a transparent layer on the silicon wafer;
an absorption layer over the transparent layer, wherein the absorption layer comprises a blanket layer extending to all edges of the silicon wafer; and
a bond layer over the absorption layer, wherein the bond layer comprises a silicon-containing dielectric material.