US 12,347,684 B2
Method and structure for cutting dense line patterns using self-aligned double patterning
Lu Ming Fan, Hubei (CN); Zi Qun Hua, Hubei (CN); Bi Feng Li, Hubei (CN); Qingchen Cao, Hubei (CN); Yaobin Feng, Hubei (CN); Zhiliang Xia, Hubei (CN); and Zongliang Huo, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Jan. 11, 2022, as Appl. No. 17/572,870.
Application 16/909,510 is a division of application No. 16/183,174, filed on Nov. 7, 2018, granted, now 10,727,056, issued on Jul. 28, 2020.
Application 17/572,870 is a continuation of application No. 16/909,510, filed on Jun. 23, 2020, granted, now 11,251,043.
Application 16/183,174 is a continuation of application No. PCT/CN2018/111834, filed on Oct. 25, 2018.
Claims priority of application No. 201711183484.8 (CN), filed on Nov. 23, 2017.
Prior Publication US 2022/0130671 A1, Apr. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); H01L 21/768 (2006.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01)
CPC H01L 21/0332 (2013.01) [H01L 21/76816 (2013.01); H01L 21/0334 (2013.01); H01L 21/0337 (2013.01); H10B 41/20 (2023.02); H10B 43/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first dielectric layer; and
objective lines formed in the first dielectric layer in a first direction, including:
a first discontinuous line pair and a second discontinuous line pair, each having a first gap in the first direction;
a third discontinuous line pair between the first discontinuous line pair and the second discontinuous line pair, the third discontinuous line pair having
a second gap in the first direction; and
a pair of bars formed in the first dielectric layer in a second direction perpendicular to the first direction, wherein:
each bar extends through the first gap in the second direction; and
in the second direction, a distance between the pair of bars is smaller than a distance between the first discontinuous line pair and the second discontinuous line pair.