US 12,347,683 B2
Method of manufacturing a semiconductor device
Jing Hong Huang, Hsinchu (TW); Wei-Han Lai, New Taipei (TW); and Ching-Yu Chang, Yuansun Village (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 6, 2024, as Appl. No. 18/597,065.
Application 18/597,065 is a continuation of application No. 17/238,458, filed on Apr. 23, 2021, granted, now 11,955,336.
Prior Publication US 2024/0249941 A1, Jul. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/027 (2006.01); G03F 7/16 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H01L 21/0276 (2013.01) [G03F 7/162 (2013.01); G03F 7/168 (2013.01); H01L 21/32139 (2013.01); H01L 21/76802 (2013.01); H10D 84/0177 (2025.01); H10D 84/038 (2025.01); H01L 21/0332 (2013.01); H01L 21/31138 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming a planarizing layer comprising a planarizing layer composition over a first feature and a second feature disposed over a substrate,
wherein the first feature and the second feature protrude from the substrate and are separated by a first distance,
wherein the planarizing layer composition comprises a polymer having one or more repeating units selected from:

OG Complex Work Unit Chemistry
wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, and each repeating unit includes at least one of —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2,
wherein R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and
n is 2-1000;
forming a photoresist layer over the planarizing layer;
selectively exposing the photoresist layer to actinic radiation; and
developing the selectively exposed photoresist layer to form a pattern in the photoresist layer.
 
13. A composition, comprising a polymer having one or more repeating units selected from the group consisting of:

OG Complex Work Unit Chemistry
wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, each repeating unit includes at least one of —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, and at least one repeating unit includes three or more of —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2,
wherein R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and
n is 2-1000.
 
18. A polymer, comprising one or more repeating units selected from:

OG Complex Work Unit Chemistry
wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, each repeating unit includes at least one of —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, and at least one repeating unit includes three or more of —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2,
wherein R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and
n is 2-1000.