| CPC H01L 21/02667 (2013.01) [H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/3003 (2013.01); H10B 41/27 (2023.02); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H10B 43/27 (2023.02)] | 20 Claims |
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1. A method of making a memory device on a substrate, comprising:
positioning the substrate in a first processing chamber comprising a first processing volume, the substrate comprising a channel structure disposed within a film stack of the substrate, the channel structure having an aspect ratio greater than about 20:1;
exposing a silicon-containing layer of the channel structure to a hydrogen plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm, the substrate maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate, the hydrogen plasma being formed from a hydrogen containing gas, wherein:
the hydrogen containing gas comprises a first gas flow and a second gas flow,
the first gas flow comprising a hydrogen source gas at a constant flow rate, and
the second gas flow comprising an inert gas at a flow rate adjusted to establish a pressure within the first processing chamber; and
performing a thermal anneal operation on the substrate, the thermal anneal operation being performed at a temperature of about 400° C. to about 1100° C.
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