US 12,347,676 B2
Substrate processing method and substrate processing system
Yuichiro Wagatsuma, Nirasaki (JP); Masahisa Watanabe, Nirasaki (JP); Mayuko Nakamura, Nirasaki (JP); Takashi Sakuma, Nirasaki (JP); Osamu Yokoyama, Nirasaki (JP); and Kwangpyo Choi, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 23, 2022, as Appl. No. 17/934,668.
Claims priority of application No. 2021-157218 (JP), filed on Sep. 27, 2021.
Prior Publication US 2023/0094053 A1, Mar. 30, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/306 (2006.01)
CPC H01L 21/02293 (2013.01) [H01L 21/02123 (2013.01); H01L 21/02172 (2013.01); H01L 21/306 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer;
selectively forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion; and
selectively forming a metal film on the silicon film formed on the surface of the epitaxial layer, and causing the silicon film to react with the metal film to form a metal silicide film such that the metal silicide film extends to adjacent side walls of the penetration portion,
wherein the selectively forming the silicon film includes:
forming the silicon film by supplying a silicon-containing gas; and
removing the silicon film formed on a side wall of the penetration portion by supplying a halogen-containing gas,
wherein, in the forming the silicon film, the silicon film is formed to cover the penetration portion, the silicon film formed on a bottom of the penetration portion is crystalline silicon, and the silicon film formed on the side wall of the penetration portion is amorphous silicon, and
wherein, in the removing the silicon film, the amorphous silicon formed on the side wall of the penetration portion is selectively removed.