US 12,347,675 B2
Methods and systems for topography-selective depositions
Akiko Kobayashi, Inagi (JP); René Henricus Jozef Vervuurt, Leuven (BE); Nobuyoshi Kobayashi, Kawagoe (JP); Takayoshi Tsutsumi, Nagoya (JP); and Masaru Hori, Nissin (JP)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on May 18, 2022, as Appl. No. 17/747,197.
Claims priority of provisional application 63/191,693, filed on May 21, 2021.
Prior Publication US 2022/0375744 A1, Nov. 24, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/402 (2013.01); C23C 16/4554 (2013.01); C23C 16/45553 (2013.01); C23C 16/4583 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 37/32816 (2013.01); H01J 2237/2001 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for topography-selective deposition of a material on a substrate, the substrate comprising a proximal surface and a gap feature, the gap feature comprising a sidewall and a distal surface, the method comprising, in the given order:
a step of positioning the substrate on a substrate support in a reaction chamber;
a step of subjecting the substrate to a plasma pre-treatment; and
a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall;
wherein the step of subjecting the substrate to the plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals; and
wherein the step of selectively depositing the material on at least one of the proximal surface and the distal surface with respect to the sidewall comprises a sub-step of exposing the substrate to a material precursor, and a sub-step of exposing the substrate to a material reactant.