US 12,347,673 B2
Method for forming a semiconductor structure having a porous semiconductor layer in RF devices
Paul D. Hurwitz, Irvine, CA (US); Edward Preisler, San Clemente, CA (US); David J. Howard, Irvine, CA (US); and Marco Racanelli, Santa Ana, CA (US)
Assigned to Newport Fab, LLC, Newport Beach, CA (US)
Filed by Newport Fab, LLC, Newport Beach, CA (US)
Filed on Aug. 12, 2021, as Appl. No. 17/400,712.
Application 17/400,712 is a division of application No. 16/597,779, filed on Oct. 9, 2019, granted, now 11,164,740.
Prior Publication US 2021/0375618 A1, Dec. 2, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 23/66 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H03K 17/687 (2006.01); H10D 62/13 (2025.01); H10D 62/40 (2025.01)
CPC H01L 21/02203 (2013.01) [H01L 21/76294 (2013.01); H01L 23/66 (2013.01); H03K 17/687 (2013.01); H10D 62/149 (2025.01); H10D 62/40 (2025.01); H01L 2223/6677 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor structure comprising:
forming a single-layer crystalline epitaxial layer directly over a non-sacrificial porous semiconductor layer, said non-sacrificial porous semiconductor layer being situated over a substrate;
forming an electrical isolation region terminating partway through said non-sacrificial porous semiconductor layer;
forming a first semiconductor device in said single-layer crystalline epitaxial layer;
completing said manufacturing of said semiconductor structure such that said non-sacrificial porous semiconductor layer and said substrate remain in said semiconductor structure upon said completing;
said substrate having a first dielectric constant, and said non-sacrificial porous semiconductor layer having a second dielectric constant that is substantially less than said first dielectric constant such that said non-sacrificial porous semiconductor layer reduces signal leakage from said first semiconductor device.