US 12,347,671 B2
Semiconductor device manufacturing method and semiconductor device manufacturing system
Tatsuya Yamaguchi, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 30, 2022, as Appl. No. 17/810,002.
Claims priority of application No. 2021-114217 (JP), filed on Jul. 9, 2021.
Prior Publication US 2023/0010649 A1, Jan. 12, 2023
Int. Cl. H01L 21/02 (2006.01); C08G 18/02 (2006.01); C08G 18/18 (2006.01); C08G 18/32 (2006.01)
CPC H01L 21/02118 (2013.01) [C08G 18/02 (2013.01); C08G 18/18 (2013.01); C08G 18/325 (2013.01); H01L 21/022 (2013.01); H01L 21/02247 (2013.01); H01L 21/02255 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate;
performing a predetermined process on the substrate on which the sacrificial film is formed; and
removing the sacrificial film by heating the substrate to depolymerize the polymer,
wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.