US 12,347,657 B2
Plasma etching apparatus, plasma etching method using the same, and semiconductor fabrication method using the same
Jongchul Park, Seoul (KR); and Sanghyun Lee, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 23, 2022, as Appl. No. 17/893,783.
Claims priority of application No. 10-2021-0178083 (KR), filed on Dec. 13, 2021.
Prior Publication US 2023/0187186 A1, Jun. 15, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01J 37/32715 (2013.01) [H01J 37/32642 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01J 2237/3341 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A plasma etching apparatus comprising:
a chuck configured to support a wafer having a first upper surface at a first level and a second upper surface at a second level higher than the first level; and
a voltage application unit comprising:
a first voltage application part configured to contact the first upper surface of the wafer and apply a first voltage to the wafer on the chuck; and
a second voltage application part configured to contact the second upper surface of the wafer and apply a second voltage to the wafer on the chuck, the second voltage being different from the first voltage.