| CPC H01J 37/32642 (2013.01) [H01J 37/32715 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01); H01L 21/68721 (2013.01); H01J 2237/1502 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01)] | 4 Claims |

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1. A plasma processing apparatus comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber, the substrate support including an electrostatic chuck;
a first ring disposed on the electrostatic chuck so as to surround a substrate to be disposed on the electrostatic chuck, the first ring including an inner annular portion, an intermediate annular portion, and an outer annular portion, a top surface of the inner annular portion being higher than a top surface of the intermediate annular portion, a top surface of the outer annular portion being higher than the top surface of the inner annular portion;
a second ring disposed on the top surface of the intermediate annular portion of the first ring and having a thickness equal to or less than the intermediate annular portion, wherein a top surface of the second ring is positioned at a first height and the first height is greater than a height of the top surface of the inner annular portion of the first ring and is less than a height of the top surface of the outer annular portion of the first ring; and
an actuator configured to vertically move the second ring so as to maintain the top surface of the second ring at the first height.
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