| CPC H01J 37/32449 (2013.01) [C23C 16/4405 (2013.01); C23C 16/45502 (2013.01); C23C 16/45591 (2013.01); C23C 16/50 (2013.01); H01J 37/32357 (2013.01); H01J 37/32862 (2013.01); H01J 2237/332 (2013.01)] | 19 Claims |

|
1. A semiconductor processing system, comprising:
an output manifold that defines at least one gas outlet, wherein the output manifold defines a recursive flow path that fluidly couples one or more gas inlets with the at least one gas outlet, and a number of the at least one gas outlet is greater than a number of the one or more gas inlets;
a gasbox disposed beneath the output manifold, the gasbox comprising an inlet side facing the output manifold and an outlet side opposite the inlet side, the gasbox comprising an inner wall that defines a central fluid lumen, wherein the inner wall tapers outward from the inlet side to the outlet side;
a spacer disposed between the output manifold and the gasbox, wherein:
the spacer defines at least one inlet that is fluidly coupled with the at least one gas outlet; and
an inner wall of the spacer defines a tapered lumen that is fluidly coupled between the at least one inlet and the central fluid lumen of the gasbox, the tapered lumen tapering outward in a direction of the inlet side of the gasbox;
an annular spacer disposed below the gasbox; and
a faceplate disposed beneath the annular spacer, the faceplate defining a plurality of apertures extending through a thickness of the faceplate.
|