US 12,347,651 B2
Etching method and plasma processing apparatus
Koki Tanaka, Miyagi (JP); Ryu Nagai, Miyagi (JP); Takatoshi Orui, Miyagi (JP); and Ryutaro Suda, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 9, 2021, as Appl. No. 17/469,895.
Claims priority of application No. 2020-157282 (JP), filed on Sep. 18, 2020.
Prior Publication US 2022/0093367 A1, Mar. 24, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32495 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber having a plasma processing space therein,
a gas supply configured to supply a gas into the plasma processing space in the chamber,
a plasma generator configured to generate plasma from the gas within the plasma processing space in the chamber; and
a controller configured to control the gas supply and the plasma generator,
wherein the controller is configured to
(a) control the gas supply to supply a film-forming gas into the plasma processing space in the chamber to form a protective film on a surface in the chamber,
(b) control the gas supply and the plasma generator to generate plasma from an etching gas to etch an etch film of a substrate by using hydrogen fluoride and one or more phosphorus-containing molecules within the plasma processing space in the chamber, and
(c) perform dry cleaning to remove a reaction product deposited on the protective film, together with at least a part of the protective film, after the substrate which is in a state where an upper surface of an underlying region has been exposed by the etching in said (b) is transferred out from the chamber, and
the film-forming gas contains a precursor that forms the protective film from a same type of material as a material of a mask provided on the etch film of the substrate.