US 12,347,645 B2
Substrate processing method and substrate processing apparatus
Shinya Morikita, Miyagi (JP); Akira Hidaka, Miyagi (JP); and Shu Kino, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Nov. 22, 2021, as Appl. No. 17/532,026.
Claims priority of provisional application 63/180,274, filed on Apr. 27, 2021.
Prior Publication US 2022/0344128 A1, Oct. 27, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01)
CPC H01J 37/32091 (2013.01) [H01J 37/321 (2013.01); H01J 37/32449 (2013.01); H01L 21/0212 (2013.01); H01L 21/02274 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/334 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A substrate processing method for processing a substrate including a first region and a second region with compositions different from each other, the substrate processing method comprising:
(a) preferentially forming, by a substrate processing apparatus, a first deposit on the first region;
(b) forming, after (a), a second deposit on the second region, the second deposit containing fluorine and the second deposit being different from the first deposit; and
(c) removing, after (b), the second deposit and at least a part of the second region, wherein
performance of step (a) starts in response to a recess defined by the first region and the second region of the substrate achieving an aspect ratio of 1 or higher, and
steps (a)-(c) are repeated, in order, in a case that a stop condition is not satisfied.