| CPC H01G 9/2072 (2013.01) [H01G 9/0036 (2013.01); H01G 9/2009 (2013.01); H10K 30/30 (2023.02); H10K 30/40 (2023.02); H10K 30/82 (2023.02); H10K 39/15 (2023.02)] | 3 Claims |

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1. A multilayer junction photoelectric converter comprising:
a multilayered-structure comprising: a first electrode functional layer; a first photoactive layer of crystalline silicon extending over the first electrode functional layer; an intermediate functional layer extending over the first photoactive layer; a second photoactive layer of a photoactive material having a perovskite crystal structure, the second photoactive layer extending over the intermediate functional layer; and a second electrode functional layer extending over the second photoactive layer,
wherein the second electrode functional layer includes a second functional layer of inorganic oxide on the second photoactive layer and functions as one of a hole injection layer and an electron transport layer, and a second electrode on the second functional layer,
wherein the second photoactive layer has a top surface and an edge surface extending in vertical to the top surface,
wherein the second functional layer extends on the top surface of the second photoactive layer to cover the top surface of the second photoactive layer, and further the second functional layer extends on an entire part of the edge surface of the multilayered-structure to cover the entire part of the edge surface of the multilayered-structure,
wherein the second functional layer comprises titanium oxide or tin oxide, and
wherein the second functional layer has a thickness in the range of 5 nm to 30 nm.
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