	US 12,347,627 B2
	Multilayer electronic device
Taku Murakami, Tokyo (JP); Nobuto Morigasaki, Tokyo (JP); Takuma Ariizumi, Tokyo (JP); Yoshitaka Nagashima, Tokyo (JP); and Tsubasa Aoki, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Oct. 31, 2023, as Appl. No. 18/498,794.
Claims priority of application No. 2022-188540 (JP), filed on Nov. 25, 2022.
Prior Publication US 2024/0177936 A1, May 30, 2024
Int. Cl. H01G 4/30 (2006.01); H01G 4/008 (2006.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01)

CPC H01G 4/30 (2013.01) [H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/1227 (2013.01)]

4 Claims

1. A multilayer electronic device comprising:

an element body including an interior region and an exterior region, the interior region including inner dielectric layers and internal electrode layers laminated alternately, the exterior region including an outer dielectric layer and being disposed outwards from the interior region in a lamination direction; and

a pair of external electrodes disposed on a surface of the element body and connected to the internal electrode layers,

wherein

the inner dielectric layers and the outer dielectric layer include a main component and a subcomponent, the main component being included in a main phase grain of the inner dielectric layers and a main phase grain of the outer dielectric layer and having a perovskite crystal structure represented by a general formula ABO₃, and the subcomponent including “RE”, “M”, and Si, where

“A” includes at least one selected from the group consisting of Ba, Sr, and Ca,

“B” includes at least one selected from the group consisting of Ti, Zr, and Hf,

“RE” includes at least one selected from the group consisting of Yb, Y, Ho, Dy, Tb, Gd, and Eu, and

“M” includes at least two selected from the group consisting of Mg, Mn, V, and Cr; and

D_RAa<D_RAb<D_RAcand D_RBa>D_RBb>D_RBcare satisfied, where

“RA” includes an element having a highest mole ratio among “RE” in the inner dielectric layers of a third region at a center of the interior region in the lamination direction,

“RB” includes an element having a highest mole ratio among “RE” in a first region at a center of the exterior region in the lamination direction,

“RA” and “RB” are different from each other,

D_RAais an “RA” content of the first region in terms of RA₂O₃with respect to 100 parts by mol of the main component in the first region,

D_RAbis an “RA” content of the inner dielectric layers of a second region in terms of RA₂O₃with respect to 100 parts by mol of the main component in the inner dielectric layers of the second region, the second region being disposed in the interior region and outwards from the third region in the lamination direction,

D_RAcis an “RA” content of the inner dielectric layers of the third region in terms of RA₂O₃with respect to 100 parts by mol of the main component in the inner dielectric layers of the third region,

D_RBais an “RB” content of the first region in terms of RB₂O₃with respect to 100 parts by mol of the main component in the first region,

D_RBbis an “RB” content of the inner dielectric layers of the second region in terms of RB₂O₃with respect to 100 parts by mol of the main component in the inner dielectric layers of the second region, and

D_RBcis an “RB” content of the inner dielectric layers of the third region in terms of RB₂O₃with respect to 100 parts by mol of the main component in the inner dielectric layers of the third region.