US 12,347,583 B2
Display device and electronic device
Akira Watanabe, Kanagawa (JP); and Yoshifumi Zaizen, Kanagawa (JP)
Assigned to Sony Group Corporation, Tokyo (JP); and Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/294,654
Filed by Sony Group Corporation, Tokyo (JP); and Sony Semiconductor Solutions Corporation, Kanagawa (JP)
PCT Filed Nov. 28, 2019, PCT No. PCT/JP2019/046664
§ 371(c)(1), (2) Date May 17, 2021,
PCT Pub. No. WO2020/111202, PCT Pub. Date Jun. 4, 2020.
Claims priority of application No. 2018-222474 (JP), filed on Nov. 28, 2018.
Prior Publication US 2022/0013593 A1, Jan. 13, 2022
Int. Cl. H01B 1/02 (2006.01); H10K 50/818 (2023.01); H10K 50/852 (2023.01); H10K 59/121 (2023.01); H10K 59/80 (2023.01)
CPC H01B 1/02 (2013.01) [H10K 50/818 (2023.02); H10K 50/852 (2023.02); H10K 59/121 (2023.02); H10K 59/876 (2023.02); H10K 59/80518 (2023.02); H10K 59/80524 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A display device comprising:
a first electrodes provided for a pixel;
an insulating layer covering a peripheral edge portion of the first electrode, the insulating layer having a first composition including a first silicon oxide and a first silicon nitride;
a first interface layer provided at an interface between the first electrode and the insulating layer, the first interface layer having a second composition;
an organic layer including a light emitting layer, and provided on the first electrodes and the insulating layer;
a second interface layer provided at an interface between the insulating layer and the organic layer, the second interface layer having a third composition including a second silicon oxide and a second silicon nitride; and
a second electrode provided on the organic layer, wherein
a ratio of the second silicon oxide to a total amount of the second silicon oxide and the second silicon nitride is 80% or more.