US 12,347,514 B2
Storage devices detecting internal temperature and defects by using temperature sensors and methods of operating the same
Younsoo Cheon, Suwon-si (KR); Jihwa Lee, Suwon-si (KR); and Kyungduk Lee, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 2, 2023, as Appl. No. 18/204,972.
Claims priority of application No. 10-2022-0101588 (KR), filed on Aug. 12, 2022.
Prior Publication US 2024/0055030 A1, Feb. 15, 2024
Int. Cl. G11C 7/04 (2006.01); G11C 11/56 (2006.01)
CPC G11C 7/04 (2013.01) [G11C 11/5628 (2013.01); G11C 11/5642 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device comprising:
a non-volatile memory configured to store data;
a temperature sensor having a resistance that changes in correspondence to a change in a temperature of the temperature sensor; and
a temperature measurement circuit comprising a plurality of transistors, the plurality of transistors configured to turn on or off based on a current flow from the temperature sensor, each of the plurality of transistors having a different threshold voltage from others of the plurality of transistors, wherein the temperature measurement circuit is configured to generate information indicating the temperature and/or indicating damage to the temperature sensor based on an output current obtained from the plurality of transistors.