US 12,347,510 B2
Bonding defect detection for die-to-die bonding in memory devices
Junyoung Ko, Suwon-si (KR); Jungmin Bak, Suwon-si (KR); and Changhwi Park, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 3, 2023, as Appl. No. 18/163,975.
Claims priority of application No. 10-2022-0073256 (KR), filed on Jun. 16, 2022; and application No. 10-2022-0107785 (KR), filed on Aug. 26, 2022.
Prior Publication US 2023/0410934 A1, Dec. 21, 2023
Int. Cl. G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 29/50 (2006.01)
CPC G11C 29/50004 (2013.01) [G11C 2029/5004 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a memory device that includes a memory cell, a page buffer, and a first switch, wherein a first end of the first switch is electrically connected to a first node located at a bonding point of the memory cell and a second end of the first switch is connected to a second node located at the page buffer; and
a memory controller that is configured to apply a pre-charge voltage to the first node and the second node during a first period, to close the first switch in a second period following the first period, and to determine whether bonding between the memory cell and the first switch is defective based on a voltage of the second node after the first switch is closed.