US 12,347,487 B2
Current and voltage limit circuitry for resistive random access memory programming
Lior Dagan, Ram-On (IL)
Assigned to Weebit Nano Ltd., Hod Hasharon (IL)
Filed by Weebit Nano Ltd., Hod Hasharon (IL)
Filed on Jun. 12, 2024, as Appl. No. 18/740,981.
Application 18/740,981 is a continuation of application No. 17/646,427, filed on Dec. 29, 2021, granted, now 12,040,017.
Claims priority of provisional application 63/142,770, filed on Jan. 28, 2021.
Prior Publication US 2024/0331772 A1, Oct. 3, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/04 (2006.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01)
CPC G11C 13/0069 (2013.01) [H10B 63/00 (2023.02); G11C 2013/0071 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A programming circuitry for a resistor of a resistive random-access memory (ReRAM), comprising:
a current-limiting circuit;
a current-terminating circuit including a current measurement circuit and a control circuit; and
a voltage-limiting circuit,
wherein the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit operate in concert; and
wherein any one of: the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit comprise an operational amplifier.