US 12,346,581 B2
Storage controller redirecting write operation and operating method thereof
Minji Kim, Suwon-si (KR); and Sangwon Jung, Busan (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 28, 2023, as Appl. No. 18/521,624.
Application 18/521,624 is a continuation of application No. 17/526,243, filed on Nov. 15, 2021, granted, now 11,861,192.
Claims priority of application No. 10-2021-0027516 (KR), filed on Mar. 2, 2021.
Prior Publication US 2024/0094930 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0634 (2013.01) [G06F 3/0617 (2013.01); G06F 3/0619 (2013.01); G06F 3/064 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An operating method of a storage controller which communicates with a host and a plurality of flash memory regions, the method comprising:
receiving a write request for a first flash memory region of the plurality of flash memory regions from the host;
determining the first flash memory region as unavailable, based on a status information set;
generating redirection information indicating that a second flash memory region of the plurality of flash memory regions is selected instead of the first flash memory region;
performing a write operation in the second flash memory region based on the redirection information;
updating status information of the second flash memory region in the status information set based on the write operation;
outputting redirection result information indicating that write data of the write request are processed in the second flash memory region, to the host; and
receiving a read request corresponding to the write data and including information of the second flash memory region from the host,
wherein the determining of the first flash memory region as unavailable based on the status information set includes:
determining the first flash memory region as unavailable when a valid page count ratio of the first flash memory region is not smaller than a maximum value of a plurality of valid page count ratios of the plurality of flash memory regions.