US 12,346,576 B2
Memory systems and operation methods thereof
Bo Cheng, Hubei (CN); and XinKai Lv, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Nov. 27, 2023, as Appl. No. 18/520,067.
Prior Publication US 2025/0173067 A1, May 29, 2025
Int. Cl. G06F 3/06 (2006.01); G06F 1/30 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 1/30 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system, comprising:
a non-volatile memory device;
a power supply circuit coupled with the non-volatile memory device and configured to provide power after power-down occurs, wherein the power supply circuit further includes a capacitor; and
a memory controller coupled with the non-volatile memory device and the power supply circuit and configured to:
obtain a number of corresponding input/output ports for data transmission in a plurality of load states respectively and a number of input/output ports currently used for data transmission;
obtain a proportion of load states of current input/output ports with respect to corresponding load states in the plurality of load states respectively based on the number of the corresponding input/output ports for data transmission in the plurality of load states respectively and the number of the input/output ports currently used for data transmission;
obtain a current predictive power supply duration of the power supply circuit in the plurality of load states respectively based on a current capacity of the capacitor, corresponding power consumption of the non-volatile memory device and the memory controller in the plurality of load states respectively, and the proportion of the load states of the current input/output ports in the plurality of load states; and
write data into the non-volatile memory device in response to the current predictive power supply duration of the power supply circuit being less than a predictive writing duration of writing the data into the non-volatile memory device, wherein the data comprises data to be written into the non-volatile memory device after the power-down occurs and before power supply of the power supply circuit ends.