US 12,346,572 B2
Memory management method, memory storage device and memory control circuit unit
Chih-Kang Yeh, Kinmen County (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Dec. 2, 2022, as Appl. No. 18/073,581.
Claims priority of application No. 111141736 (TW), filed on Nov. 2, 2022.
Prior Publication US 2024/0143190 A1, May 2, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0607 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A data storage method, configured for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical management units, and the data storage method comprises:
receiving first data from a host system;
in response to the first data being received from the host system, encoding the first data based on a first code rate to generate first parity data;
storing the first data and the first parity data in a plurality of first physical management units in the plurality of physical management units;
collecting second data from a source unit in the rewritable non-volatile memory module via a garbage collection operation;
in response to the second data being collected from the source unit in the rewritable non-volatile memory module via the garbage collection operation, encoding the second data based on a second code rate to generate second parity data, wherein the first code rate for encoding the first data from the host system is different from the second code rate for encoding the second data from the source unit; and
storing the second data and the second parity data in a plurality of second physical management units in the plurality of physical management units,
wherein the first data and the second data are respectively stored in the plurality of first physical management units and the plurality of second physical management units via a same programming mode.