US 12,346,569 B2
Storage device, electronic device including storage device, and operating method of electronic device including storage device
Jooyoung Hwang, Suwon-si (KR); and Hyun Jin Choi, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 9, 2023, as Appl. No. 18/388,329.
Claims priority of application No. 10-2023-0033457 (KR), filed on Mar. 14, 2023.
Prior Publication US 2024/0311015 A1, Sep. 19, 2024
Int. Cl. G06F 3/06 (2006.01); G06F 12/02 (2006.01)
CPC G06F 3/0616 (2013.01) [G06F 3/0656 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G06F 2212/7205 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device, comprising:
a nonvolatile memory device comprising a plurality of erase units, each erase unit of the plurality of erase units comprising a plurality of memory cells; and
a memory controller configured to:
assign first memory cells of each erase unit of a plurality of first erase units among the plurality of erase units as y-level cells, each y-level cell of the y-level cells storing y bits, y being a positive integer greater than zero;
assign second memory cells of each erase unit of a plurality of second erase units among the plurality of erase units as x-level cells, each x-level cell of the x-level cells storing x bits, x being a positive integer greater than zero and less than y;
allocate, based on an open zone request received from an external host device, a zone to at least one first erase unit among the plurality of first erase units, and permit a sequential write with respect to the zone;
buffer data to be written in the zone by storing the data in at least one second erase unit among the plurality of second erase units; and
provide the external host device with information about the at least one second erase unit buffering the data to be written in the zone.