US 12,346,027 B2
Methods of making a semiconductor device
Pei-Cheng Hsu, Hsinchu (TW); Ching-Huang Chen, Hsinchu (TW); Hung-Yi Tsai, Hsinchu (TW); Ming-Wei Chen, Hsinchu (TW); Hsin-Chang Lee, Hsinchu (TW); and Ta-Cheng Lien, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 17, 2024, as Appl. No. 18/745,236.
Application 18/214,348 is a division of application No. 17/556,681, filed on Dec. 20, 2021, granted, now 11,726,399, issued on Aug. 15, 2023.
Application 18/745,236 is a continuation of application No. 18/214,348, filed on Jun. 26, 2023, granted, now 12,044,960.
Application 17/556,681 is a continuation of application No. 16/744,732, filed on Jan. 16, 2020, granted, now 11,204,545, issued on Dec. 21, 2021.
Prior Publication US 2024/0337917 A1, Oct. 10, 2024
Int. Cl. G03F 7/20 (2006.01); G03F 1/24 (2012.01)
CPC G03F 7/2004 (2013.01) [G03F 1/24 (2013.01)] 20 Claims
 
1. A method of making a semiconductor device, the method comprising:
directing extreme ultraviolet (EUV) light to a reflective mask to reflect patterned EUV light onto a photoresist layer disposed on a target layer, the patterned EUV light selectively exposing the photoresist layer;
developing the selectively exposed photoresist layer to form a patterned photoresist layer; and
patterning the target layer using the patterned photoresist layer as a mask,
wherein the reflective mask comprises:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer; and
an absorber layer disposed on the capping layer, the absorber layer including one or more alternately stacked pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.