US 12,346,026 B2
Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device
Toshiaki Fukuhara, Shizuoka (JP); Takeshi Kawabata, Shizuoka (JP); and Sou Kamimura, Shizuoka (JP)
Assigned to FUJIFILM Corporation, Tokyo (JP)
Filed by FUJIFILM Corporation, Tokyo (JP)
Filed on Apr. 20, 2022, as Appl. No. 17/724,956.
Application 17/724,956 is a continuation of application No. PCT/JP2020/039638, filed on Oct. 22, 2020.
Claims priority of application No. 2019-211566 (JP), filed on Nov. 22, 2019.
Prior Publication US 2022/0252985 A1, Aug. 11, 2022
Int. Cl. G03F 7/11 (2006.01); G03F 7/075 (2006.01); G03F 7/09 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01)
CPC G03F 7/11 (2013.01) [G03F 7/0757 (2013.01); G03F 7/091 (2013.01); G03F 7/2006 (2013.01); G03F 7/2041 (2013.01); G03F 7/30 (2013.01); G03F 7/327 (2013.01)] 15 Claims
 
1. A A composition for forming an underlayer film, the composition comprising:
a silicon atom-containing compound; and
a halogen-based solvent,
a non-halogen-based solvent,
wherein a content of the halogen-based solvent is 1.0 ppb by mass to 50.0 ppm by mass with respect to a total mass of the composition for forming an underlayer film, and
a concentration of solid contents in the composition for forming an underlayer film is 0.1% to 20% by mass.
 
11. A resist pattern forming method comprising:
forming an underlayer film on a substrate by using the composition for forming an underlayer film according to claim 1;
forming a resist film on the underlayer film by using a resist composition;
exposing the resist film; and
developing the exposed resist film with a developer to form a resist pattern.
 
12. A resist pattern forming method comprising:
forming a second underlayer film on a substrate by using a composition for forming a second underlayer film, which includes an aromatic ring-containing compound;
forming an underlayer film on the second underlayer film by using the composition for forming an underlayer film according to claim 1;
forming a resist film on the underlayer film by using a resist composition;
exposing the resist film; and
developing the exposed resist film with a developer to form a resist pattern.