US 12,346,019 B2
Reflective mask
Pei-Cheng Hsu, Hsinchu (TW); Ta-Cheng Lien, Hsinchu (TW); and Hsin-Chang Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 8, 2024, as Appl. No. 18/658,522.
Application 18/658,522 is a continuation of application No. 17/991,740, filed on Nov. 21, 2022, granted, now 12,013,630.
Application 17/991,740 is a continuation of application No. 17/109,833, filed on Dec. 2, 2020, granted, now 11,506,969, issued on Nov. 22, 2022.
Claims priority of provisional application 63/030,035, filed on May 26, 2020.
Prior Publication US 2024/0302731 A1, Sep. 12, 2024
Int. Cl. G03F 1/24 (2012.01)
CPC G03F 1/24 (2013.01) 20 Claims
 
1. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed over the reflective multilayer;
a photo catalytic layer disposed over the capping layer, the photo catalytic layer being capable of catalytically decomposing a hydrocarbon residue formed on the reflective mask upon exposure to extreme ultraviolet radiation; and
an absorber layer disposed over the photo catalytic layer, the absorber layer comprising an opening exposing a portion of the photo catalytic layer.