US 12,346,017 B2
Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
Masanori Nakagawa, Tokyo (JP)
Assigned to HOYA CORPORATION, Tokyo (JP)
Appl. No. 17/761,100
Filed by HOYA CORPORATION, Tokyo (JP)
PCT Filed Sep. 23, 2020, PCT No. PCT/JP2020/035728
§ 371(c)(1), (2) Date Mar. 16, 2022,
PCT Pub. No. WO2021/060253, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 2019-175851 (JP), filed on Sep. 26, 2019.
Prior Publication US 2022/0342293 A1, Oct. 27, 2022
Int. Cl. G03F 1/24 (2012.01); G03F 1/58 (2012.01); G03F 1/76 (2012.01)
CPC G03F 1/24 (2013.01) [G03F 1/58 (2013.01); G03F 1/76 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A reflective mask blank comprising:
a substrate; a multilayer reflective film for reflecting exposure light, the multilayer reflective film on the substrate, and an absorber film on the multilayer reflective film, wherein:
the multilayer reflective film comprises a multilayer film in which a low refractive index layer and a high refractive index layer are alternately layered, and an uppermost layer on the multilayer film,
the low refractive index layer comprises molybdenum (Mo),
the high refractive index layer and the uppermost layer comprise silicon (Si),
the multilayer film is formed by sputtering in the presence of at least one additive element selected from hydrogen (H), and deuterium (D), and
the additive element in the multilayer film corresponding to a region where a transfer pattern is formed has an atomic number density of 0.006 atom/nm3 or more and 0.0424 atom/nm3 or less.